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AH312
Product Features
* 400 - 2300 MHz * +33 dBm P1dB * +51 dBm Output IP3 * 18 dB Gain @ 900 MHz * +5V Single Positive Supply * MTTF > 100 Years
The Communications Edge TM Product Information
2 Watt, High Linearity InGaP HBT Amplifier
Product Description
The AH312 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowbandtuned application circuits with up to +49 dBm OIP3 and +33 dBm of compressed 1dB power. It is housed in a leadfree/green/RoHS-compliant SOIC-8 package. All devices are 100% RF and DC tested.
Functional Diagram
1 8
2
7
3
6
4
5
The AH312 is targeted for use as a driver amplifier in * Lead-free/green/RoHS-compliant wireless infrastructure where high linearity and medium power is required. An internal active bias allows the SOIC-8 SMT Pkg. AH312 to maintain high linearity over temperature and operate directly off a single +5V supply. This combination Applications makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G base * Final stage amplifiers for Repeaters stations.
Function Vref Input Output Vbias GND N/C or GND
Pin No. 1 3 6, 7 8 Backside Paddle 2, 4, 5
* Mobile Infrastructure
Specifications (1)
Parameter
Operational Bandwidth Test Frequency Gain Input R.L. Output R.L. Output P1dB Output IP3 (2) IS-95A Channel Power
@ -45 dBc ACPR, 1960 MHz
Typical Performance (4)
Units Min
MHz MHz dB dB dB dBm dBm dBm dBm dB mA V 700 400 9 2140 10 20 6.8 +33.2 +48 +27.5 +25.3 7.7 800 +5 900
Typ
Max
2300
Parameter
Frequency S21 - Gain S11 - Input R.L. S22 - Output R.L. Output P1dB Output IP3 IS-95A Channel Power
@ -45 dBc ACPR
Units
MHz dB dB dB dBm dBm dBm dBm dB 8.0 900 18 -18 -11 +33 +49 +27
Typical
1960 11 -19 -6.8 +33.4 +51 +27.5 +25.3 7.3 7.7 +5 V @ 800 mA 2140 10 -20 -6.8 +33.2 +48
+32 +47
wCDMA Channel Power
@ -45 dBc ACLR
wCDMA Channel Power
@ -45 dBc ACLR, 2140 MHz
Noise Figure Operating Current Range, Icc (3) Device Voltage, Vcc
Noise Figure Device Bias (3)
4. Typical parameters reflect performance in a tuned application circuit at +25 C.
1. Test conditions unless otherwise noted: 25C, +5V Vsupply, 2140 MHz, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +17 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. It is expected that the current can increase by an additional 200 mA at P1dB. Pin 1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull 22mA of current when used with a series bias resistor of R1=15. (ie. total device current typically will be 822 mA.)
Absolute Maximum Rating
Parameter
Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power Junction Temperature -40 to +85 C -65 to +150 C +28 dBm +8 V 1400 mA 8W +250 C
Rating
Ordering Information
Part No.
AH312-S8G AH312-S8PCB900 AH312-S8PCB1960 AH312-S8PCB2140
Description
2 Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
900 MHz Evaluation Board 1960 MHz Evaluation Board 2140 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 1 of 7 March 2006
AH312
40 35 30 25 Gain (dB) 20 15 10
The Communications Edge TM Product Information
2 Watt, High Linearity InGaP HBT Amplifier
S-Parameters (VCC = +5 V, ICC = 800 mA, T = 25 C, calibrated to device leads)
Typical Device Data
S11
1.0
0.8
1.0
2. 0
2. 0
DB(|S[2,1]|)
DB(GMax)
0. 4
6 0.
6 0.
0.8
Gain / Maximum Stable Gain
S22
Swp Max 3GHz
Swp Max 3GHz
0 3.
0 4.
10.0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
.0 -2
-0 .6
-0 .6
0
0.5
-0.8
-0.8
-1.0
Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The impedance plots are shown from 50 - 3000 MHz, with markers placed at 0.5 - 3.0 GHz in 0.5 GHz increments. S-Parameters (VCC = +5 V, ICC = 800 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000
-0.86 -0.64 -0.68 -0.76 -0.93 -1.15 -1.50 -2.39 -4.47 -11.96 -8.66 -2.76 -1.21 -0.68 -0.43 -0.32 -0.29
-178.06 178.18 172.85 164.33 155.56 146.04 134.58 121.66 104.01 86.06 -179.11 159.91 142.90 130.93 121.91 114.61 108.16
27.55 22.16 16.13 10.61 7.46 5.78 4.87 4.74 5.33 5.96 4.41 0.53 -3.21 -7.27 -10.41 -13.28 -15.94
113.72 98.81 89.06 77.31 67.94 57.62 46.90 32.96 14.01 -17.55 -56.78 -89.86 -107.99 -123.14 -134.93 -143.22 -149.93
-45.75 -45.46 -42.65 -43.96 -41.17 -41.65 -40.36 -40.22 -38.97 -38.96 -39.35 -43.55 -41.56 -42.46 -39.71 -40.99 -39.65
30.91 12.80 6.09 4.69 6.70 -5.78 -7.84 -16.51 -48.82 -86.32 -144.53 145.94 104.25 73.64 64.28 58.20 48.40
-0.38 -0.38 -0.48 -0.48 -0.61 -0.66 -0.71 -0.80 -0.76 -0.60 -0.52 -0.41 -0.54 -0.68 -0.73 -0.73 -0.79
-1.0
1 1.5 Frequency (GHz)
2
2.5
.0 -2
-10
.4 -0
.4 -0
Swp Min 0.05GHz
-130.98 -157.30 -172.51 177.51 173.63 170.49 169.31 168.22 167.91 170.63 167.41 164.50 160.11 157.84 154.66 151.14 147.52
Device S-parameters are available for download off of the website at: http://www.wj.com
Application Circuit PC Board Layout
Circuit Board Material: .014" Getek, single layer, 1 oz copper, Microstrip line details: width = .026", spacing = .026" The silk screen markers `A', `B', `C', etc. and `1', `2', `3', etc. are used as placemarkers for the input and output tuning shunt capacitors - C8 and C9. The markers and vias are spaced in .050" increments.
Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 2 of 7 March 2006
-3 .0
-3 .0
-5
Swp Min 0.05GHz
-4 .0 -5. 0
-4 .0 -5. 0
0
2 -0.
2 -0.
-10.0
-10.0
5
0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
0.2
5.0
0. 4
0 3.
0 4.
5.0
0.2
10.0
AH312
Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3
(+17 dBm / tone, 1 MHz spacing)
The Communications Edge TM Product Information
2 Watt, High Linearity InGaP HBT Amplifier
900 MHz Application Circuit (AH312-S8PCB900)
Typical RF Performance at 25 C
900 MHz 18 dB -18 dB -11 dB +33 dBm +49 dBm +27 dBm 8.0 dB +5 V 800 mA
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
Noise Figure Device / Supply Voltage Quiescent Current (1)
1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8.
S21 vs. Frequency
S11 vs. Frequency
S22 vs. Frequency
20 19 S21 (dB) S11 (dB) 18 17 16
+25C -40C +85C
0 -5 -10 -15 -20 -25 -30 840
+25C -40C +85C
0 -5 S22 (dB) -10 -15
+25C -40C +85C
15 840
860
880
900
920
940
860
880
900
920
940
-20 840
860
880
900
920
940
Frequency (MHz)
Noise Figure vs. Frequency
10 8 P1dB (dBm) NF (dB) 6 4 2 36 34
Frequency (MHz)
P1dB vs. Frequency
Circuit boards are optimized at 880 MHz
Frequency (MHz)
ACPR vs. Channel Power
IS-95, 9 Ch. Fwd, 885 kHz offset, 30 kHz Meas BW, 900 MHz
-40
ACPR (dBc)
-40C
860 880
32 30 28
-50
-60
-40 C +25 C +85 C
-40C
0 840 860 880
+25C
900
+85C
920 940 26 840
+25C
900
+85C
-70
920 940
22
23
24
25
26
27
28
29
Frequency (MHz)
Frequency (MHz)
Output Channel Power (dBm)
OIP3 vs. Output Power 55 50 45 40 35
freq. = 900 MHz, 901 MHz, +25 C
OIP3 vs. Frequency 55 50 45 40 35 840
+25 C, +17 dBm/tone
OIP3 vs. Temperature 55 50 45 40 35 -40
freq. = 900 MHz, 901 MHz, +17 dBm/tone
OIP3 (dBm)
OIP3 (dBm)
860
880 900 Frequency (MHz)
920
940
-15
10 35 Temperature (C)
60
85
OIP3 (dBm)
12
14
16 18 20 22 Output Power (dBm)
24
26
Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 3 of 7 March 2006
AH312
Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3
(+17 dBm / tone, 1 MHz spacing)
The Communications Edge TM Product Information
2 Watt, High Linearity InGaP HBT Amplifier
1960 MHz Application Circuit (AH312-S8PCB1960)
Typical RF Performance at 25 C
1960 MHz 11 dB -20 dB -6.8 dB +33.4 dBm +51 dBm +27.5 dBm 7.3 dB +5 V 800 mA
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
Noise Figure Device / Supply Voltage Quiescent Current (1)
1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8.
S21 vs. Frequency
S11 vs. Frequency
S22 vs. Frequency
13 12 S21 (dB) S11 (dB) 11 10 9
+25C -40C +85C
0 -5 -10 -15 -20 -25 -30 1930
+25C -40C +85C
0 -5 S22 (dB) -10 -15
+25C -40C +85C
8 1930
1940
1950
1960
1970
1980
1990
1940
1950
1960
1970
1980
1990
-20 1930
1940
1950
1960
1970
1980
1990
Frequency (MHz)
Noise Figure vs. Frequency
10 8 6 4 2 P1dB (dBm) NF (dB) 36 34 32 30 28
Frequency (MHz)
P1dB vs. Frequency
Circuit boards are optimized at 1960 MHz
Frequency (MHz)
ACPR vs. Channel Power -35 -45 -55 -65 -40 C -75
1990
IS-95, 9 Ch. Fwd, 885 kHz offset, 30 kHz Meas BW, 1960 MHz
-40C
0 1930 1940 1950 1960
+25C
1970
+85C
1980 1990 26 1930 1940
-40C
1950
+25C
1960 1970
+85C
1980
ACPR (dBc)
+25 C 26 27
+85 C 28 29
22
23
24
25
Frequency (MHz)
Frequency (MHz)
Output Channel Power (dBm) OIP3 vs. Output Power 55 50 45 40 35
freq. = 1960 MHz, 1961 MHz, +25 C
OIP3 vs. Frequency 55 50 45 40 35 1930
+25 C, +17 dBm/tone
OIP3 vs. Temperature 55 50 45 40 35 -40
freq. = 1960 MHz, 1961 MHz, +17 dBm/tone
OIP3 (dBm)
OIP3 (dBm)
1940
1950 1960 1970 Frequency (MHz)
1980
1990
-15
10 35 Temperature (C)
60
85
OIP3 (dBm)
12
14
16 18 Output Power (dBm)
20
22
Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 4 of 7 March 2006
AH312
Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3
(+17 dBm / tone, 1 MHz spacing)
The Communications Edge TM Product Information
2 Watt, High Linearity InGaP HBT Amplifier
2140 MHz Application Circuit (AH312-S8PCB2140)
Typical RF Performance at 25 C
2140 MHz 10 dB -20 dB -6.8 dB +33.2 dBm +48 dBm +25.3 dBm 7.7 dB +5 V 800 mA
wCDMA Channel Power
(@-45 dBc ACLR, 3GPP, TM 1+64 DPCH)
Noise Figure Device / Supply Voltage Quiescent Current (1)
1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8.
S21 vs. Frequency
S11 vs. Frequency
S22 vs. Frequency
12 11 S21 (dB) S11 (dB) 10 9 8
+25C -40C +85C
0 -5 -10 -15 -20 -25 -30 2110
+25C -40C +85C
0 -5 S22 (dB) -10 -15
+25C -40C +85C
7 2110
2120
2130
2140
2150
2160
2170
2120
2130
2140
2150
2160
2170
-20 2110
2120
2130
2140
2150
2160
2170
Frequency (MHz)
Noise Figure vs. Frequency
10 8 P1dB (dBm) NF (dB) 6 4 2 36 34
Frequency (MHz)
P1dB vs. Frequency
Circuit boards are optimized at 2140 MHz
Frequency (MHz)
ACPR vs. Channel Power
-35 -40 ACPR (dBc) -45 -50 -55
3GPP W -CDMA, Test Model 1+64 DPCH, 5 MHz offset, 2140 MHz
32 30 28
-40C
0 2110 2120 2130 2140
+25C
2150
+85C
2160 2170 26 2110 2120
-40C
2130
+25C
2140 2150
+85C
2160 2170
-40 C
-60 22 23 24 25
+25 C
26
+85 C
27
Frequency (MHz)
Frequency (MHz)
Output Channel Power (dBm)
OIP3 vs. Frequency 55 50 45 40 35 2110
+25 C, +17 dBm/tone
OIP3 vs. Temperature 55 50 45 40 35 -40
freq. = 2140 MHz, 2141 MHz, +17 dBm/tone
OIP3 vs. Output Power 55 50 45 40 35
freq. = 2140 MHz, 2141 MHz, +25 C
OIP3 (dBm)
OIP3 (dBm)
2120
2130 2140 2150 Frequency (MHz)
2160
2170
-15
10 35 Temperature (C)
60
85
OIP3 (dBm)
12
14
16 18 Output Power (dBm)
20
22
Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 5 of 7 March 2006
AH312
The Communications Edge TM Product Information
2 Watt, High Linearity InGaP HBT Amplifier
Application Note: Reduced Bias Configurations
The AH312 can be configured to be operated with lower bias current by varying the bias-adjust resistor - R1. The recommended circuit configurations shown previously in this datasheet have the device operating in Class A operation. Lowering the current has little effect on the gain, OIP3, and P1dB performance of the device, but will slightly lower the ACLR/ACPR performance of the device as shown below. An example of the measured data below represents the AH312 measured and configured for 2.14 GHz applications. It is expected that variation of the bias current for other frequency applications will produce similar performance results. AH312-S8PCB2140 Performance Data R1 (ohms) 15 22 43 62 110 Icq (mA) 800 700 600 500 400 Pdiss (W) 4.0 3.5 3.0 2.5 2.0 P1dB (dBm) +33.3 +33.3 +33.1 +33.0 +32.9 OIP3 (dBm) +51.4 +50.9 +50.9 +50.7 +47.3
2.14GHz Gain vs. Output Power
10.2 55
2.14GHz OIP3 vs. Output Power per Tone
9.8 50 9.4
OIP3 (dBm)
Gain (dB)
Idq=800mA 'Class A'
9
45
Idq=800mA 'Class A' Idq=700mA
Idq=700mA Idq=600mA
8.6
40
Idq=600mA Idq=500mA
Idq=500mA Idq=400mA
35 18 20 22 24 26 28 30 32 34 10
8.2
Idq=400mA
12 14 16 18 20 22 24
Output Power (dBm) W-CDMA ACLR vs. Output Channel Power
3GPP W-CDMA, Test Model 1 + 64 DPCH, 5 MHz offset
Power Out per Tone (dBm)
CW PAE vs. Output Power
100
-35
Idq=800mA 'Class A' Idq=800mA 'Class A' Idq=700mA Idq=600mA Idq=700mA
-40
PAE (%)
Idq=600mA
ACLR (dBc)
-45 -50 -55 -60 -65 14
Idq=500mA Idq=400mA
Idq=500mA Idq=400mA
10
1
16 18 20 22 24 26
18
20
22
24
26
28
30
32
W-CDMA Channel Power Out (dBm)
CW Tone Power Out (dBm)
Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 6 of 7 March 2006
AH312
The Communications Edge TM Product Information
2 Watt, High Linearity InGaP HBT Amplifier
AH312-S8G (Lead-Free Package) Mechanical Information
This package is lead-free/green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260 C reflow temperature) and lead (maximum 245 C reflow temperature) soldering processes.
Outline Drawing
Product Marking
The component will be marked with an "AH312G" designator with an alphanumeric lot code on the top surface of the package. The obsoleted tin-lead version will have been marked with an "AH312-S8" or "ECP200G" designator. Tape and reel specifications for this part are located on the website in the "Application Notes" section.
ESD / MSL Information
ESD Rating: Value: Test: Standard:
Class 1B Passes between 500 and 1000V Human Body Model (HBM) JEDEC Standard JESD22-A114
MSL Rating: Level 2 at +260 C convection reflow Standard: JEDEC Standard J-STD-020
Mounting Config. Notes Mounting Configuration / Land Pattern
1. A heatsink underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device can occur without the use of one. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 4. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 6. RF trace width depends upon the PC board material and construction. 7. Use 1 oz. Copper minimum. 8. All dimensions are in millimeters (inches). Angles are in degrees.
Thermal Specifications
Parameter
Operating Case Temperature (1) Thermal Resistance (2), Rth Junction Temperature (3), Tjc
M vs. GND Tab Tem TTF perature
100000
-40 to +85 C 17.5 C / W 155 C
Notes: 1. The amplifier can be operated at 105 C case temperature for up to 1000 hours over its lifetime without degradation in performance and will not degrade device operation at the recommended maximum 85 C case temperature for the rest of its lifetime. 2. The thermal resistance is referenced from the junction-to-case at a case temperature of 85 C. Tjc is a function of the voltage at pins 6 and 7 and the current applied to pins 6, 7, and 8 and can be calculated by: Tjc = Tcase + Rth * Vcc * Icc 3. This corresponds to the typical biasing condition of +5V, 800 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 C.
MTTF (million hrs)
Rating
10000
1000
100 60 70 80 90 100 110 Tab Tem perature (C) 120
Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 7 of 7 March 2006

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